1) powder sputter
粉末溅射
1.
Recently,we have solved the doping impurity stability by powder sputtering,and solved the structure stability by selecting proper substrate(Al_2O_3)and sputtered parameters,such that a kind with doping impurity stability,structure stability,better gas sensing characters yielded.
最近通过用粉末溅射解决气敏层的掺杂稳定性;通过选择合适的绝缘衬底(Al_2O_3)和适当选择溅射参数得到掺杂稳定,结构稳定,性能良好的ZnO薄膜酒敏元件。
2.
The ZnO/1%CeO2 thin-film was prepared by adopting the powder sputtering method.
采用粉末溅射法研制ZnO:1%CeO2薄膜,利用衬底Al2O3与ZnO晶体均为六方结构的特点,选择适当溅射参数研制出薄膜气敏元件,同时通过悬挂芯片双点焊工艺,使元件更加小型化。
3.
The technics of two kinds of thin film gas sensors made by powder sputtering are introduced.
介绍了用粉末溅射做出的两种平面薄膜型酒敏元件的工艺、芯片结构和基本参数测试的结果。
2) powder sputtering
粉末溅射
1.
The gas sensing characteristics of a new type of semiconductor thin film SnO 2/SnO 2∶Pt double layer thin film were introduced The film was fabricated by powder sputtering using surface-layer doping method The influence of the thickness of the conductance layer on gas sensing properties was investigated The problems related to gas sensing mechanism were discusse
介绍了一种新型结构 CO气敏的半导体薄膜材料——粉末溅射方法制备的表面层掺杂 Sn O2 /Sn O2 ∶ Pt双层膜的气敏特性。
2.
The two types of bulk doped thin films, the SnO 2:Pt film and the doubl e-layer SnO 2/SnO 2:Pt film, were prepared by powder sputtering.
用粉末溅射方法制备了体掺杂型SnO2 :Pt薄膜和表面层掺杂SnO2 /SnO2 :Pt双层膜 ,测量了薄膜在不同CO体积分数下的灵敏度和电导 。
3.
Two kinds of bulk doped thin films,a SnO 2:Pt film and a double layer SnO 2/SnO 2:Pt film,were deposited by powder sputtering method.
采用粉末溅射方法制备了体掺杂型SnO2 :Pt薄膜和SnO2 /SnO2 :Pt双层膜 。
3) powder-sputter
粉末溅射
1.
Properties of gas sensitive device of powder-sputtered SnO_2/CeO_2 thin film;
粉末溅射SnO_2/CeO_2薄膜气敏元件的性能
2.
Through measuring and study on powder-sputtered SnO2/CeO2 thin film gas sensor, the relationship of the reaction temperature Δtrea increment and gas concentration C is Δtrea=(ACn)/(1+BOm), where A, B >0.
通过对粉末溅射SnO2/CeO2薄膜气敏元件性能的测试和探讨,总结出反应升温△trea与气体浓度C存在关系△trea=(ACn)/(1+BCm)(其中A,B>0,n>m>0),同时发现:湿度对灵敏度的影响很大而对相对灵敏度影响不大;为确保测量的可靠性应避免用于测量高浓度气体,同时注意稳定测试电压,如用相对灵敏度进行测量,则可以减小湿度对测量结果(测量值)的干扰。
4) powder diffraction
粉末衍射
1.
The crystal structure of Bromopentamminocobalt bromide([Co(NH3)5Br]Br2) has been ab initio determined from the X - ray powder diffraction data collected on a Rigaku D/MAX - rB diffractometer.
总结了粉末衍射从头晶体结构测定中的问题与对策,并采用常规X射线粉末衍射数据,从头测定了配合物[Co(NH_3)_5Br]Br_2的晶体结构。
2.
Due to its special characteristics MEM is one of the most promising methods for ab initio structure determination from powder diffraction data, which is one of the most challenging subjects of materials research and crystallography today.
从粉末衍射数据直接测定晶体结构，是材料科学和晶体学研究的热门课题之一。
3.
As a tool for analyzing X-ray powder diffraction data, the whole powder-pattern decomposition method (WPPD in short) without reference to crystal structural model can refine the unit cell parameters and the positions, intensities and other profile parameters of individual reflections.
在Ｘ射线粉末衍射数据的解析中，整体分解（ＷＰＰＤ）法不涉及被测晶体的晶胞构造而能确定各条衍射线的位置、强度及其它线形参数，并得到精密化的晶胞参数值。
6) powder X ray diffraction
粉末X衍射
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条