1) large-grained
大晶粒
1.
Superplasticty in Large-grained Intermetallics;
金属间化合物大晶粒超塑性变形机理
2.
The superplastic phenomenon in large-grained Ni-48Al alloy can be .
显微结构分析表明 ,原始大晶粒组织经超塑性变形后显著细化 ,大晶粒超塑性变形机理为高温变形过程中发生的连续动态回复与再结
2) large grain
大晶粒
1.
Design and manufacture of in-pile irradiation fuel assembly with large grained UO_2 pellets;
大晶粒UO_2燃料芯块堆内试验组件的研制
2.
A series test proved that the large grain of Alloy GH4049 depend on the heat Speed of parts, such heat method (Class A) can refrain from large grain i.
通过一系列试验,发现GH4049合金出现大晶粒问题与零件的加热速率有密切关系。
3) large grains
大晶粒
1.
High temperature deformation behaviour of Fe-28Al-2Ti alloy with large grains was examined.
本文研究了大晶粒Ｆｅ_３Ａｌ基合金Ｆｅ—２８Ａｌ—２Ｔｉ合金的高温变形行为。
4) large grained
大晶粒
1.
EBSD study of the microstructural evolution of large grained Ni-42Al alloy during superplastic deformation;
EBSD技术对大晶粒Ni-42Al合金超塑变形过程组织演变的研究
5) crystallite size
晶粒大小
1.
In this study,the least square method for separating twofold broadening effect of crystallite-fault were proposed and used to characterize the average crystallite size and stacki.
为了表征这种纳米ZnO的晶粒大小和层错几率,提出了分解纳米ZnO微晶-层错二重宽化效应的最小二乘法。
2.
The result shows that its crystallite size is decreased,micro\|strain and effective temperature are increased as well as its crystalline lattice is disordered with grinding time increasing.
研究表明 :随着粉磨的进行 ,金红石型TiO2 的晶粒大小D减少、显微应变ε增加 ,有效温度系数增加 ,晶格无序化程度增强。
3.
And the calculation of crystallite size derived from Debye-Scherrer s equation is carried out in terms of Least Square Method by self-written VB program.
然后在Debye-Scherrer方程的基础上运用最小二乘法对晶粒大小进行计算,这一过程由自编的VB程序完成。
6) Grain growth
晶粒长大
1.
Monte Carlo simulation of grain growth——Recursive statistics method of grain size;
晶粒长大的Monte Carlo模拟方法——递归统计法测定晶粒度
2.
Cellular automaton model for grain growth based on modified transition rule;
基于改进转变规则的晶粒长大CA模型
3.
Rule of welding HAZ grain growth in the ultra-fine grain steel;
超精细粒钢中焊接HAZ晶粒长大规律
补充资料：Assembly晶粒封装
以树酯或陶瓷材料，将晶粒包在其中，以达到保护晶粒，隔绝环境污染的目的，而此一连串的加工过程，即称为晶粒封装（assembly）。封装的材料不同，其封装的作法亦不同，本公司几乎都是以树酯材料作晶粒的封装，制程包括：芯片切割→晶粒目检→晶粒上「架」（导线架，即lead frame）→焊线→模压封装→稳定烘烤（使树酯物性稳定）→切框、弯脚成型→脚沾锡→盖印→完成。以树酯为材料之ic，通常用于消费性产品，如计算机、计算器，而以陶瓷作封装材料之ic，属于高性赖度之组件，通常用于飞弹、火箭等较精密的产品上。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条