1) Flaw characterization
缺陷表征
1.
This paper proposes a method for flaw characterization on the basis of neural networks.
提出了一种基于神经网络的缺陷表征方法。
3) IC defect characterization
集成电路缺陷表征
4) intrinsic defects
本征缺陷
1.
Potential parameters fitting and simulation calculation of intrinsic defects in PbMoO_4;
钼酸铅晶体势参数的拟合及本征缺陷的模拟计算
2.
But we discovered that the intrinsic defects can still make effective action even if the ZnO have doped by n type impurity dopants.
通过实验 ,已经证实了产生这种现象的原因是溅射时氧氩比的改变导致了ZnO薄膜内部的本征缺陷浓度的改变 ,使得载流子浓度变化而导致的结果。
3.
Study of intrinsic defects in ZnO varistor ceramics by dielectric spectroscopy
从理论上证明了介电松弛过程在介电谱上等效于电子松弛过程,认为室温下105Hz处特征损耗峰起源于耗尽层处本征缺陷所形成的电子陷阱。
6) intrinsic defect
本征缺陷
1.
The results show that some additives such as Ba have a restraint effect on the formation of intrinsic defect Zni2+.
结果表明，本征缺陷二次电离填隙锌Zni2+能否探测到不但与其相对浓度大小有关，还与测量温度有关；某些添加剂例如Ba对Zni2+缺陷的形成有抑制作用。
2.
It is found that the interior stoichiometry of GaAs crystal wafers can be modified by annealing and the modification in stoichiometry can results in respective changes in intrinsic defects and electrical properties.
发现不同 As压条件下的热处理可以改变 Ga As晶片的化学配比 ,并导致本征缺陷和电参数的相应变化。
3.
The excellent electric properties and stability under the long duration load voltage of the system ZnO-Bi 2O 3-Sb 2O 3-BaO result from an appropriate amount of BaSb 2O 6 phase that makes Schottky barrier height and grain-boundary resistance increasing and restains the formation of intrinsic defect Z ¨ n i .
结果表明，ＺｎＯ－Ｂｉ２Ｏ３－Ｓｂ２Ｏ３－ＢａＯ系压敏陶瓷优良的直流电参数和长期电负荷下的工作稳定性，来源于适量的偏锑酸钡相使肖特基势垒高度升高及相应地晶界电阻增大，以及对本征缺陷Ｚ¨ｎｉ的抑制作
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条