1) β-Ga_2O_3 single crystal
β-Ga2O3单晶
1.
β-Ga_2O_3 single crystals,the wide band gap semiconductor,were grown using floating zone technique.
-βGa2O3单晶的荧光谱不仅观察到了3个特征峰:紫外光(395nm)、蓝光(471nm)、绿光(559nm),还观察到了在277和297nm的紫外光和692nm的红光荧光发射。
2) β Si 3N 4 single crystal particles
β-Si3N4单晶
3) β-FeSi_2 single crystals
β-FeSi_2单晶
1.
Crystal growth technology and crystal structure of high quality β-FeSi_2 single crystals grown from vapor by employing chemical vapor transport technique and its phase transition under high pressure were studied.
本论文对闭管化学气相生长高质量β-FeSi_2单晶的工艺条件、β-FeSi_2单晶的晶体结构及其高压相演化进行了深入研究。
4) Ga_2O_3
Ga2O3
1.
GaN thin film have been fabricated by gas nitriding of Ga_2O_3 on the silicon substrate in the tube furnace.
采用Ga2O3与NH3在管式电炉中于高温常压下进行反应,并在硅基片上沉积GaN薄膜,研究了各种工艺参数如反应温度、NH3的流量、硅基片反应前后处理等因素对沉积GaN薄膜的影响,并通过SEM和AFM对生成物进行了分析。
2.
GaN powders were fabricated by gas nitriding of Ga_2O_3 in the tube furnace.
在管式电炉中,采用Ga2O3与NH3高温常压下反应生成了GaN粉体。
5) the ultralong β-gallium oxide nanowire
β-Ga2O3超长纳米线
6) Ga2O3/ITO/Ga2O3 films
Ga2O3/ITO/Ga2O3膜
1.
Ga2O3 films and Ga2O3/ITO/Ga2O3 films were prepared by alternate RF magnetron sputtering of Ga2O3target and DC magnetron sputtering of ITO(indium tin oxide)target.
用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO(锡铟氧化物)靶材分别制备了Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜,用紫外-可见分光光度计、四探针测试仪对Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜的光学透过率和电阻率进行了表征。
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条