1) doping concentration
掺杂浓度
1.
Measurement of doping concentration in strained Si_(1-x) Ge_x with four-probe array;
四探针法测量应变Si_(1-x)Ge_x掺杂浓度
2.
The electroluminescence spectra of devices with different doping concentration are detected under different driving current densities.
分别以PtOEP掺杂和未掺杂的Alq3膜作为发光层制作有机发光器件(OLED),改变掺杂浓度,检测器件电致发光(EL)光谱的变化。
3.
Based on rate equations,changing doping concentration and cladding size of the Er3+/Yb3+ co-doped double-cladding fiber laser,the effect of the doping concentration and cladding sizeon the performance of the Er3+/Yb3+ co-doped double-cladding fiber laser was studied.
为了研究掺杂浓度、包层尺寸对双包层Er3+/Yb3+共掺光纤激光器的影响,根据双包层Er3+/Yb3+共掺光纤激光器产生激光的机理,基于速率方程,采用改变Er3+,Yb3+掺杂浓度、内包层尺寸等光纤参数的方法,得到了双包层Er3+/Yb3+共掺光纤激光器随光纤参数变化的特征结果。
2) Doped concentration
掺杂浓度
1.
53 μm photoluminescence intensity,doped concentration,and pump power were numerically simulated for Yb-Er co-doped .
考虑两级合作上转换、激发态吸收和交叉弛豫等非线性效应,建立了镱铒共掺氧化铝材料体系的八个能级的速率方程,唯象地构造了合作上转换、激发态吸收、交叉弛豫等系数随镱铒掺杂浓度的变化函数,数值模拟了Yb∶Er∶Al2O3材料1。
2.
By taking account of the loss of cavity as a function of the Nd 3+ doped concentration, a new expressions of the laser output power and the slope efficiency as a function of the doped concentration are obtained, which are coincident with the experimental results quite well.
通过对 Nd:YVO4晶体吸收特性的研究 ,对全固态 Nd:YVO4激光器中晶体的 Nd3 + 掺杂浓度在强光抽运条件下对激光输出特性的影响进行了分析 ,得出了激光器的输出功率和斜效率与晶体掺杂浓度的对应关系。
3.
% doped concentration,and a output coupler with radius of 30mm,were chosen in this experiment,and 456nm laser threshold was realized at 0.
实验中采用标称输出功率为3W的LD,端面抽运掺杂浓度为0。
3) dopant concentration
掺杂浓度
1.
Influence of dopant concentration on properties of Al-F co-doped ZnO thin films;
掺杂浓度对Al-F共掺杂ZnO透明导电薄膜性能的影响
2.
The effect of oxygen content of the Nd-Fe-B permanent magnets doping Dy2O3 on the magnetic properties,the relation between the oxygen content of the magnets and the dopant concentration and ball abradant time have been studied by Mossbauer effect and magnetic measurement.
用穆斯堡尔效应和磁性测量等方法，研究了掺杂Ｄｙ_２Ｏ_３Ｎｄ－Ｆｅ－Ｂ磁体的氧含量对磁性能的影响以及氧含量与掺杂浓度和制粉球磨时间的关系，结果表明，掺杂Ｄｙ_２Ｏ_３可以有效地提高磁体的矫顽力，但其剩磁和最大磁能积会不同程度地降低，磁体中的氧含量由掺杂浓度和制备工艺所决定，并满足一定关系式。
3.
8-hydroxyquinoline aluminum(Alq3)was used as a host material, while tetraphenylporphyrin (TPP) as the dopant material, we constructed five electroluminescent (EL) devices with different dopant concentration, and studied the influence that the dopant concentration imposed on the EL devices’ electroluminescence spectra, color, max-brightness and max-efficiency.
以8-羟基喹啉铝(Alq3)为主体发光材料,四苯基卟啉(TPP)为掺杂染料,制备了5种不同摩尔掺杂浓度(0。
4) doping density
掺杂浓度
1.
By using MATLAB software, the authors carry out simulation computation and optimization; and study in a deep-going way the effect of the change of doping density and external bias voltage on frequency and amplitude of self-sustained oscillation of doped GaAs/AlAs superlattice with weak coupling.
运用MATLAB软件进行模拟计算和优化,深入研究掺杂浓度和外加偏压的变化,对GaAs/AlAs掺杂弱耦合超晶格自维持振荡频率和振幅的影响。
2.
The research results indicate that with the increase of doping density in channel,the hot carrier effect immunity becomes better.
基于流体动力学能量输运模型 ,利用二维仿真软件 Medici研究了深亚微米槽栅 PMOS器件衬底和沟道掺杂浓度对器件抗热载流子特性的影响 ,并从器件内部物理机理上对研究结果进行了解释。
3.
The method to deal with doping density for t he simulation of semiconductor devices was discussed.
讨论了半导体器件模拟计算中的掺杂浓度处理方法，比较了Ｆｏｒｔｒａｎ与Ｍａｔｌａｂ两种计算，指出利用Ｍａｔｌａｂ可以避免复杂繁琐的编程，而且调整极为方便。
5) high-doping concentration
高浓度掺杂
6) doped parameter x
掺杂浓度x
补充资料：半导体材料掺杂
半导体材料掺杂
doping for semiconductor material
bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
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参考词条