3) combined oxygen
化合态氧
1.
25%, combined oxygen-21 .
25％），化合态氧为辅（21。
4) oxidation bonding
氧化结合
1.
SiC preforms with porosity of 38%、48% and 61% respectively were prepared by oxidation bonding process from W28 SiC powders and W10 graphite powders.
以W28的工业磨料用碳化硅粉和W10的高纯石墨粉为原料,采用氧化结合法制备出孔隙含量分别为38%、48%和61%的SiC预成形坯。
2.
SiC preforms with different porosities for Al pressureless infiltrating in were prepared by oxidation bonding process deriving from micron-grade powders of SiC and graphite.
以微米级的碳化硅粉和石墨粉为原料,采用氧化结合法制备出不同孔隙含量的、适合液态铝无压渗透的SiC预成形坯。
6) crystalline oxide
晶态氧化物
1.
In the search for new alternatives, a novel structure\_\_COS(crystalline oxides on semiconductor) has been suggested.
人们在寻找新的栅介质材料时 ,提出了一种新的结构 ,称为半导体上的晶态氧化物 (COS) 。
补充资料：钴钼氢氧化物氧化物磷酸盐
CAS：68130-37-0
中文名称：钴钼氢氧化物氧化物磷酸盐
英文名称：Cobalt molybdenum hydroxide oxide phosphate； Molybdenum cobalt acid phosphate complex； Molybdenumcobaltacid phosphate complex
中文名称：钴钼氢氧化物氧化物磷酸盐
英文名称：Cobalt molybdenum hydroxide oxide phosphate； Molybdenum cobalt acid phosphate complex； Molybdenumcobaltacid phosphate complex
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条