Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition;

The effect of depositing temperature on growth structure and characters of silicon nanowires;

Silicon Nanowires Fabricated by MEMS Technology and Its Properties Characterization;

Effects of ambient pressure on the growth of silicon nanowire and silicon micron whiskers;

Phosphorus-doped silicon nanowire(P-SiNW) and boron-doped silicon nanoparticle chain(B-SiNC) synthesized by using laser ablation method were investigated by transmission electron microscopy(TEM), high resolution transmission electron microscopy(HRTEM), near edge X-ray absorption fine structure spectroscopy(NEXAFS), X-ray photoelectron spectroscopy(XPS) and field emission measurement etc.

Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.

X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the effects of reaction conditions (catalysts,reaction temperature and time) on the crystalline phases and morphologies of the carbothermal reaction products in the sol-gel synthesis of Si3N4 nanowires.