1) porous SiC ceramics
碳化硅多孔陶瓷
1.
The main preparation methods of porous SiC ceramics are reviewed respectively,and the advantages and disadvantages existing in these preparation methods are also analyzed in this paper.
分别对碳化硅多孔陶瓷的主要制备方法进行了阐述,分析了这些制备方法的主要优缺点,并指出将来的研究重点应是高性能碳化硅多孔陶瓷的低成本制备技术及其应用领域的进一步拓展。
2) porous SiC ceramic
多孔碳化硅陶瓷
1.
The nickel ferrite coated on porous SiC ceramic was prepared using polyacrylamide gel method with iron nitrate [Fe(NO3)3.
以Ni(NO3)2和Fe(NO3)3、丙烯酰胺、N,N′-亚甲基双丙烯酰胺为原料,采用高分子凝胶法在多孔碳化硅陶瓷表面包覆了镍铁氧体涂层。
3) porous silicon nitride ceramics
多孔氮化硅陶瓷
1.
Effect of organic additives on porous silicon nitride ceramics prepared by extrusion method
有机添加剂对多孔氮化硅陶瓷挤出成型工艺的影响
2.
The dielectric properties of reaction bonded porous silicon nitride ceramics with global macro-pores which were prepared by adding pore-forming agent benzoic acid into silicon powders were investigated under varied porosity and pore size.
研究添加成孔剂法制备的有球形宏观孔的多孔氮化硅陶瓷在不同孔隙率和孔径下的介电性能。
3.
This paper presents the dielectric and mechanical properties of porous silicon nitride ceramics.
研究了预烧结对反应烧结多孔氮化硅陶瓷的介电性能和力学性能的影响。
4) electro-heating porous silicon carbide ceramic matrix
电致发热多孔碳化硅陶瓷基体
5) silicon carbide ceramic
碳化硅陶瓷
1.
Microstructure observation on corrosion behavior of liquid phase sintered silicon carbide ceramics
液相烧结碳化硅陶瓷腐蚀行为的显微观察
2.
The silicon carbide ceramic obtained by pyrolyzing the polyferrocarbosilane has some magnetic properties because of the formation of Fe_3Si characterized by XRD.
采用低分子量的聚硅烷(LPS)与二茂铁合成聚铁碳硅烷(PFCS),后者经高温烧成可制得磁性碳化硅陶瓷,XRD分析表明碳化硅陶瓷具有磁性的原因是由于生成了Fe3Si。
3.
Reaction bonded silicon carbide ceramic materials has many excellent performance, such as high-temperature oxidation resistance, corrosion resistance, resistance to wear and tear, heat shock resistance, which make it become one of the most effective methods of silicon carbide preparation.
反应烧结碳化硅陶瓷材料具有优良的抗高温氧化、耐腐蚀、耐磨损、抗热冲击等性能,使反应烧结成为制备碳化硅材料最有效的方法。
6) SiC Ceramics
碳化硅陶瓷
1.
SiC ceramics is a new type structural material which has excellent mechanical properties in high temperature.
碳化硅陶瓷是一种具有优良的高温力学性能的新型结构陶瓷材料 ,具有热膨胀系数小、比重轻 (只有重金属的三分之一 )、导热系数大等特性 ,非常适合应用于航空航天高温结构件的制造。
2.
SiC ceramics were prepared by pressureless sintering.
采用常压烧结法制备碳化硅陶瓷,对其显微结构和导电性能进行了分析。
补充资料：碳化硅晶须补强碳化硅陶瓷基复合材料
分子式：
CAS号：
性质：以碳化硅陶瓷为基和以碳化硅晶须为增强剂的新型陶瓷材料。通过晶须的载荷转移、拔出及裂纹偏转作用，获得比普通碳化硅更高的强度和韧性。使用温度达1400℃。是一种重要的高温结构陶瓷。用于燃气轮机叶片等高温部件和耐磨件制造。采用原位生长工艺和烧结工艺制取。
CAS号：
性质：以碳化硅陶瓷为基和以碳化硅晶须为增强剂的新型陶瓷材料。通过晶须的载荷转移、拔出及裂纹偏转作用，获得比普通碳化硅更高的强度和韧性。使用温度达1400℃。是一种重要的高温结构陶瓷。用于燃气轮机叶片等高温部件和耐磨件制造。采用原位生长工艺和烧结工艺制取。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条