1) SiC crystal
SiC晶体
1.
Fabrication of nanostructures on 6H SiC crystal illuminated by 800 nm and 400 nm femtosecond laser is studied.
研究了800nm和400nm飞秒激光垂直聚焦于6H SiC晶体表面制备纳米微结构。
2) SiC single crystal growth
SiC体单晶生长
3) SiC whisker
SiC晶须
1.
Growth mechanism of SiC whisker in Al_2O_3-ZrO_2-C slide gate;
铝锆碳质滑板中SiC晶须形成机理
2.
Study on the SiC whisker toughening Ti(C,N)-based cermet composites;
SiC晶须增韧Ti(C,N)基金属陶瓷复合材料的研究
3.
Study on the separation of the paramorphic SiC whisker and SiC particle;
同质异形体SiC晶须与SiC颗粒的分离
4) SiC whiskers
SiC晶须
1.
The dispersion performances of four different dispersants in SiC whiskers suspension were investigated by centrifugal sedimentation turbidimetric method.
利用离心沉降浊度法对SiC晶须在4种不同分散剂中的分散行为进行了研究,探讨了不同分散剂的分散效果,并对其分散机理进行了分析。
2.
The texture of SiC whiskers and it’s influence on cavity in SiCw/Mg-Zn-Zr composites during superplastic deformation were studied.
研究了镁基复合材料超塑性变形过程中SiC晶须织构的演化规律,并分析了其对孔洞行为的影响。
3.
SiC whiskers and Ti(C,N) particles toughened Al 2O 3 matrix ceramic composites for cutters were fabricated with hot pressing technique, with a certain amount of Y 2O 3 used as sintering aids to reduce the sintering temperature.
研究了不同烧结温度(16 0 0～ 175 0℃ )下 ,材料的致密度和力学性能 (断裂韧性KIC ,维氏硬度HV和抗弯强度σf)随晶须含量 (10 %～4 0 % )的变化关系 ;探讨了SiC晶须和Ti(C ,N)颗粒对Al2 O3基体的协同增韧机理。
5) SiC platelet
SiC片晶
1.
The ultrafine SiC platelets,as an ideal toughening material,has been substituted for SiC fiber which is expensive and hardly prepared,because of its high strength,high modulus of elasticity and thermal conductivity.
超细SiC片晶由于其高强度、高弹性模量和导热系数已成为替代价值昂贵、制备技术复杂SiC晶须的理想的增韧材料。
补充资料：晶体管-晶体管逻辑电路
| 晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。 |
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参考词条