1) stress impedance effect
应力阻抗效应
1.
Stress impedance effects of FeCoSiB films deposited on flexible substrates;
柔性FeCoSiB非晶磁弹性薄膜的应力阻抗效应
2.
The stress impedance effect is studied for the Co66Fe4Cr2Si12B16 amorphous ribbons under bending strain.
对具有负磁致伸缩系数的Co66Fe4Cr2Si12B16非晶合金带在制备态下及经脉冲电流退火下的应力阻抗效应进行了研究。
2) stress-impedance effect
应力阻抗效应
1.
The influence of anisotropic fields on stress-impedance effect in amorphous alloys;
各向异性场对非晶态合金应力阻抗效应的影响
2.
When a high frequency alternating current flows through the Co-based amorphous ribbon bended,there is obvious stress-impedance effect due to the stress.
通以高频交变电流的钴基非晶带在弯曲时,由于受到应力作用而具有显著的应力阻抗效应,实验中所用的材料是经过适当脉冲电流退火的钴基非晶合金薄带Co66。
3) giant stress impedance effect
巨应力阻抗效应
1.
Base on the measuring theory of the Giant Stress Impedance effect(GSI) and the definition of the Stain Gauge factor of the GSI materials(SGF), research on the structure and elements of the measuring system.
根据巨应力阻抗效应的检测原理以及巨应力阻抗材料应变因子的定义,对其检测系统的结构和工作原理进行了设计研究。
4) stress-impedance
应力阻抗
1.
Influencing factors on stress-impedance of FeCoSiB thin films and improvement;
FeCoSiB薄膜应力阻抗性能的的影响因素及提高方法
2.
The thickness effects of FeSiB film and Cu layer on the stress-impedance(SI) effects were studied in the frequency range of 1~40 MHz.
用磁控溅射法制备弯曲形FeSiB/Cu/FeSiB多层膜,在1~40MHz范围内研究FeSiB膜和Cu膜厚度对多层膜结构应力阻抗效应的影响。
3.
FeSiB/Cu/FeSiB trilayers with a meander structure were fabricated by magnetron sputtering on thin glass substrate,and the stress-impedance(SI) effects were studied in the frequency range of 1-40MHz for different film thicknesses of FeSiB films and Cu layer.
采用磁控溅射法在玻璃基底上制备了曲折状FeSiB/Cu/FeSiB三层膜结构,在1~40MHz范围内研究了FeSiB膜和Cu膜厚度对三层膜结构应力阻抗效应的影响。
5) stress impedance
应力阻抗
1.
The effect of annealing conditions on stress impedance properties of FeCuNbSiB amorphous alloy strip was studied.
研究了退火条件对非晶FeCuNbSiB带材应力阻抗性能的影响。
2.
The stress impedance effects of the as-deposited films at different annealing temperature were also investigated.
测试了不同温度退火后,薄膜样品的应力阻抗效应。
3.
In this thesis, the stress impedance effects of the FeCoSiB thin film have been studied and the tunable planar thin film inductor based on the magnetoelastic property of FeCoSiB thin film has been prepared.
本文针对FeCoSiB 薄膜材料的应力敏感特性,从理论和实验上研究了FeCoSiB 薄膜材料的应力阻抗效应,并研究了FeCoSiB 薄膜在磁场可调平面薄膜电感中的应用。
6) Pressure-Resistance Effect
力阻效应
补充资料：星接阻抗和三角接阻抗的变换
星接阻抗和三角接阻抗的变换
transformation between starc-onnected and delta-connected impedances
x ing]一e乙日kongl介e sonJ一00}Iez日伙ongde匕一。一〕huon星接阻抗和三角接阻抗的变换(t ransfor-mation betweenstar一eonneeted and delta-eonneeted imPedanees)接成星形的三个阻抗和接成三角形的三个阻抗互相替代的等效变换。它们之间的关系可用一组变换公式表示。按这组公式，用星接阻抗替换三角接阻抗或者反过来，不会影响稳态下电路其他部分的正弦电压和电流，常用于对称三相电路的分析和计算。 图1为三个阻抗21、Z:、23接成星形(又称丫形)。图2为三个阻抗Z小22。、Zal接成三角形(又称△形)。它们之间的变换公式如下:人23土图1星接阻抗图2三角接阻抗(1)将星形连接变换成三角形连接212一Z:+22+2 122及3一22+za十警(1)、|冬|矛231一23+21+2321(2)将三角形连接变换成星形连接z、-二一典乒兴-) 艺‘2士乙“3十乙31…_2 oqZI，}Z。一下万~一二-二二-汁 乙‘2士乙23十乙3‘1_Z。IZoq}艺q一二二一~二，二二--，-二二-~J 乙12十乙23十艺32夕(2) 当三个星接阻抗相等，即21一Z:一23一z丫、三个三角接阻抗相等即212一223一231一Z△时，变换公式是 Z二一32丫，Z丫一Z△/3
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条