1) Thin layer soft lithography
薄层软刻蚀
2) Soft lithography
软刻蚀
1.
Reverse reposition imaging technique of AFM used to compare the topography of the master,stamp and the pattern in soft lithography;
用于软刻蚀复型及转印前后形貌比较的反向重定位AFM成像方法
2.
Soft lithography—A new microfabrication and microstructure copying method;
软刻蚀——图形转移和微制造新工艺
3.
A series of grating microstructure surfaces with different parameters have been designed and fabricated by soft lithography.
设计并利用软刻蚀技术制备了一系列不同参数的光栅微结构表面,对水滴在这些非光滑表面上的接触角进行测量,测量结果表明材料表面几何结构直接影响接触角的大小,通过设计微结构的几何参数可以获得理想的超疏水材料。
3) laminar flow etching
层流刻蚀
4) Deepetching
深层刻蚀
5) DF-CCP
SiCOH薄膜刻蚀
1.
12MHz/2MHz、60MHz/2MHz dual-frequency capacitively couple plasma (DF-CCP) of CHF3 and the etching of SiCOH film.
与传统SiO2介质的刻蚀相比较,由于SiCOH薄膜中存在孔隙,因此刻蚀率随着薄膜密度的降低而增加,从而导致薄膜粗糙度增加、侧向微枝结构的形成和刻蚀深度发生改变,结果难以实现SiCOH薄膜刻蚀过程的精确控制。
6) etch stop layer
蚀刻阻挡层
1.
For further optimal process,a single GaInP etch stop layer with 30～50 nm thickness,which was inserted in the vertical structure of normal quantum well material,was verified.
为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30～ 5 0 nm的 Ga In P蚀刻阻挡层。
2.
In order to improve the controllability of the dry etching depth during the fabrication process of ridge waveguide, an etch stop layer is designed in the vertical structure of GaInP/AlGaInP ridge waveguide.
针对脊形波导制作过程中蚀刻深度不易控制的问题 ,对GaInP/AlGaInP材料系统中加入蚀刻阻挡层进行了研
补充资料：薄蚀
1.薄食。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条