1) impurity on substrate surface
衬底表面杂质
2) substrate impurity
衬底杂质
3) substrate doping density
衬底杂质浓度
1.
Based on the hydrodynamic energy transport model, the influence of substrate doping density on performance for deep sub micron grooved gate PMOSFET is studied using two dimensional device simulator MEDICI and is compared to that of the counterpart conventional planar device.
研究发现 ,随着衬底掺杂浓度的提高 ,与平面器件相同 ,槽栅器件的阈值电压提高 ,漏极驱动能力降低 ,抗热载流子能力急剧退化 ;但与平面器件相比 ,槽栅器件的阈值电压受衬底杂质浓度影响较小 ;漏极驱动能力及抗热载流子性能随衬底杂质浓度提高的退化则较平面器件小得
4) surface impurity
表面杂质
5) substrates surface nirtation treating
衬底表面氮化
补充资料：补衬
1.犹补充。 2.破布块。
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