1) Al2O3 thin film
Al2O3薄膜
1.
Al2O3 thin films were grown by atomic layer deposition using trimthylaluminum (TMA) and water (H2O) as precursors at 270℃.
以Al(CH3)3和H2O为反应源,在270℃下用原子层淀积(ALD)技术在Si衬底上生长了Al2O3薄膜。
2.
Al2O3 thin film were deposited on both sides of manganin fiols.
而采用绝缘封装层为Al2O3薄膜的箔式传感器,可拓宽其测压上限。
3.
The preparation process of Al2O3 thin film is represented by the sol-gel method,in which Al(NO3)3·9H2O is used as precusor,water and HNO3 as solvent and peptizing agent,respectively.
分别以溶液下降法和真空浸渍法在三维网络碳化硅陶瓷骨架(3D-SiC)表面浸涂γ-AlOOH溶胶,采用不同烧结制度在3D-SiC表面生成了Al2O3薄膜。
2) alumina film
Al2O3薄膜
1.
Thin alumina films were deposited on the heat-resistant steel,type HP40.
以仲丁醇铝(ATSB)为前驱物、氮气为载气,用金属有机化学气相沉积法(MOCVD)在HP40钢表面沉积了Al2O3薄膜。
3) TiO2/Al2O3 films
TiO2/Al2O3薄膜
1.
Anatase TiO2 and TiO2/Al2O3 films were successfully prepared on foam nickel substrates by sol-gel technique.
研究表明:泡沫镍负载的TiO2和TiO2／Al2O3薄膜具有良好的光催化活性,特别是TiO2／Al2O3薄膜具有更高的催化活性。
4) γ-Al2O3 thin film
γ-Al2O3薄膜
5) Er-doped Al_2O_3 thin films
掺铒Al2O3薄膜
6) Nanostructured α-Al_2O_3 film
α-Al2O3纳米薄膜
补充资料：(E)-2-Hepten-1-al
CAS: 18829-55-5
分子式: C7H12O
分子量: 112.17
沸点: 90-91℃
中文名称: E-2-庚烯醛
分子式: C7H12O
分子量: 112.17
沸点: 90-91℃
中文名称: E-2-庚烯醛
英文名称: (E)-2-Heptenal；(E)-2-Hepten-1-al；(e)-2-heptena；3-butylacrolein；beta-butylacrolein；trans-2-heptenal
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条