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1)  VO_2 thin film
VO_2薄膜
1.
Control the optical and electrical properties of VO_2 thin films during preparation process;
制备过程中对VO_2薄膜热致相变光电性能的控制
2.
The study of VO_2 thin film on spectra ranging from visible light to infrared light at high and low temperatures is also introduced.
从晶体学角度描述了具有可逆相变特性的VO_2的晶体结构,介绍了VO_2薄膜在可见光-红外光波段的高低温光谱研究情况及激光辐照下VO_2薄膜的突变特性。
3.
VO_2 thin film have a bright application future in many fields such as intellectual window which can change the temperature automatically,laser protective film,infrared detector,optical data shortage material.
VO_2是一种相变型氧化物,具有金属一半导体转变的相变特性,其相变时具有电学和光学突变性质,这一特性使VO_2薄膜在众多领域,如自动调节温度的智能窗、激光防护薄膜、红外探测仪、光学数据存储材料等具有好的应用前景。
2)  VO_2 thin films
VO_2薄膜
1.
The pure VO_2 thin films and V_2O_5 thin films which undergone difference techniques and annealing processes were fabricated on glass substrates by the method of inorganic SOL-GEL from V_2O_5 powder,and the best preparing process was chosed,the preparing process on Si substrates was also researched,and we got the better method to prepare the VO_2 pure films.
本文以市售分析纯V_2O_5为原料,采用无机溶胶—凝胶的方法,用不同工艺退火处理在玻璃衬底上成功的制备出了单相V_2O_5薄膜和单相VO_2薄膜,并筛选出了最佳的单相薄膜制备工艺;同时探索了在单晶硅衬底上的VO_2薄膜制备方法。
2.
In this paper, VO_2 thin films is prepared by radio frequency magnetron sputtering and annealed at different temperature in argon atmosphere.
本文采用射频磁控溅射沉积方法,结合气氛退火工艺制备了VO_2薄膜,通过优化制备工艺,研究磁控溅射工艺与薄膜退火处理对薄膜微观结构和光电性能影响,制备出化学计量比接近理论值、高质量的VO_2薄膜
3)  VO_2(B) thin films
VO_2(B)薄膜
4)  VO_2(B) film
VO_2(B)型薄膜
5)  the doped vanadium dioxide thin film
VO_2掺杂薄膜
6)  vanadium dioxide
VO_2
补充资料:(beta-4)-vanadate (vo43-tripotassium
CAS:14293-78-8
分子式:K3VO4
中文名称:钒酸三钾
英文名称:tripotassium, (T-4)-Vanadate;Potassium vanadate (ortho);(beta-4)-vanadate (vo43-tripotassium;Vanadate,tripotassium,(T-4)-;Potassium vanadate(ortho)
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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